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Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well

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Hassan, A. H. A., Morris, R. J. H. (Richard J. H.), Mironov, O. A., Beanland, R., Walker, David, Huband, Steven, Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2014) Anisotropy in the hole mobility measured along the [110] and [110] orientations in a strained Ge quantum well. Applied Physics Letters, Volume 104 (Number 13). Article number 132108. doi:10.1063/1.4870392

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Official URL: http://dx.doi.org/10.1063/1.4870392

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Abstract

In this paper, we report on anisotropic transport properties of strained germanium (sGe) quantum wells grown on Si (001) substrates with p-type doping beneath the sGe channel. Mobility measurements were made along orthogonal [110] directions. The level of measured resistivity anisotropy in the [110] and [1¯10] orientations was found to vary between 2 and 9 for different samples. This corresponds to an actual mobility anisotropy ratio of between 1.3 and 2, values that are significantly higher than previously found for sGe. From modeling of the low temperature (12 K) mobility, using the relaxation time approach, the anisotropy in mobility was accounted for by a difference in interface roughness scattering between the two orientations. For the [110] orientation, a step height of Δ = 0.28 nm and interface roughness periodicity of λ = 7 nm were found while for the [1¯10] orientation, λ reduced to 4 nm and Δ increased to 0.42 nm. High-resolution X-ray diffraction and transmission electron microscopy confirmed a 1° off-cut in the wafer towards the [1¯10] direction.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Library of Congress Subject Headings (LCSH): Germanium, Anisotropy, Quantum wells
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 2 April 2014
Dates:
DateEvent
2 April 2014Published
3 March 2014Accepted
9 January 2014Submitted
Volume: Volume 104
Number: Number 13
Article Number: Article number 132108
DOI: 10.1063/1.4870392
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access

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