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Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2
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Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615
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Official URL: http://dx.doi.org/10.1116/1.4868615
Abstract
The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O2 content. Below 50% of O2 content, a large variation in Ge etch rates is found compared to that of Si, but for O2 content above 50% the etch rates follow relatively the same trend. Lightly doped Ge shows the highest etch rate at a O2 concentration up to 20%. Sidewall angles range from a minimum of 80° to a maximum of 166°, with O2 concentration of 20% yielding perfect anisotropic mesa etch. Also at this O2 concentration, reasonable Si/Ge selectivity is possible. These observations indicate that by adjusting the O2 concentration, precision plasma etching of Si, Ge, and Ge:P is possible.
| Item Type: | Journal Article | ||||||||
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| Subjects: | Q Science > QC Physics | ||||||||
| Divisions: | Faculty of Science > Physics | ||||||||
| Library of Congress Subject Headings (LCSH): | Plasma etching, Germanium -- Etching, Silicon -- Etching | ||||||||
| Journal or Publication Title: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | ||||||||
| Publisher: | American Institute of Physics | ||||||||
| ISSN: | 0734-2101 | ||||||||
| Official Date: | 31 March 2014 | ||||||||
| Dates: |
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| Date of first compliant deposit: | 27 December 2015 | ||||||||
| Volume: | Volume 32 | ||||||||
| Number: | Number 3 | ||||||||
| Article Number: | Article number 031302 | ||||||||
| DOI: | 10.1116/1.4868615 | ||||||||
| Status: | Peer Reviewed | ||||||||
| Publication Status: | Published | ||||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||||
| Funder: | Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7), Advantage West Midlands (AWM), European Regional Development Fund (ERDF), Birmingham Science City, Thailand | ||||||||
| Grant number: | EP/F040784/1 (EPSRC), EP/J001074/1 (EPSRC), 257375 (FP7) |
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