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Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2

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Wongwanitwattana, Chalermwat, Shah, V. A., Myronov, Maksym, Parker, Evan H. C., Whall, Terry E. and Leadley, D. R. (David R.) (2014) Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 32 (Number 3). Article number 031302. doi:10.1116/1.4868615

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Official URL: http://dx.doi.org/10.1116/1.4868615

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Abstract

The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O2 content. Below 50% of O2 content, a large variation in Ge etch rates is found compared to that of Si, but for O2 content above 50% the etch rates follow relatively the same trend. Lightly doped Ge shows the highest etch rate at a O2 concentration up to 20%. Sidewall angles range from a minimum of 80° to a maximum of 166°, with O2 concentration of 20% yielding perfect anisotropic mesa etch. Also at this O2 concentration, reasonable Si/Ge selectivity is possible. These observations indicate that by adjusting the O2 concentration, precision plasma etching of Si, Ge, and Ge:P is possible.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Plasma etching, Germanium -- Etching, Silicon -- Etching
Journal or Publication Title: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Publisher: American Institute of Physics
ISSN: 0734-2101
Official Date: 31 March 2014
Dates:
DateEvent
31 March 2014Published
3 March 2014Accepted
20 November 2013Submitted
Volume: Volume 32
Number: Number 3
Article Number: Article number 031302
DOI: 10.1116/1.4868615
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Seventh Framework Programme (European Commission) (FP7), Advantage West Midlands (AWM), European Regional Development Fund (ERDF), Birmingham Science City, Thailand
Grant number: EP/F040784/1 (EPSRC), EP/J001074/1 (EPSRC), 257375 (FP7)

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