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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry

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Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015

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Official URL: http://dx.doi.org/10.1016/j.sse.2014.04.015

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Abstract

A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Solid-State Electronics
Publisher: Elsevier
ISSN: 0038-1101
Official Date: August 2014
Dates:
DateEvent
August 2014Published
24 April 2014Available
Volume: Volume 98
Page Range: pp. 93-98
DOI: 10.1016/j.sse.2014.04.015
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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