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Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
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Shah, V. A., Myronov, Maksym, Rhead, S., Halpin, John E., Shchepetov, A., Prest, M. J. (Martin J.), Prunnila, Mika, Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2014) Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry. Solid-State Electronics, Volume 98 . pp. 93-98. doi:10.1016/j.sse.2014.04.015
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Official URL: http://dx.doi.org/10.1016/j.sse.2014.04.015
Abstract
A thin, flat and single crystal membrane on which to mount sensors is generally required for integration with electronics through standard silicon processing technology. We present an approach to producing single crystal membranes of germanium with in-built tensile strain, which serves to keep the membrane flat and ripple free, and demonstrate a 600 nm thick, free-standing 1 mm2 Ge membrane. We convert the fabrication technique into an integrated-circuit compatible wafer scale process to produce 60 nm thin membranes with large areas of 3.5 mm2. The single crystal Ge membrane provides an excellent platform for further epitaxial growth or deposition of materials.
| Item Type: | Journal Article | ||||||
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| Divisions: | Faculty of Science > Physics | ||||||
| Journal or Publication Title: | Solid-State Electronics | ||||||
| Publisher: | Elsevier | ||||||
| ISSN: | 0038-1101 | ||||||
| Official Date: | August 2014 | ||||||
| Dates: |
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| Volume: | Volume 98 | ||||||
| Page Range: | pp. 93-98 | ||||||
| DOI: | 10.1016/j.sse.2014.04.015 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
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