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Modelling the inhomogeneous SiC Schottky interface
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Gammon, P. M., Pérez-Tomás, Amador, Shah, V. A., Vavasour, O., Donchev, E., Pang, J. S., Myronov, Maksym, Fisher, Craig A., Jennings, M. R., Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2013) Modelling the inhomogeneous SiC Schottky interface. Journal of Applied Physics, Volume 114 (Number 22). Article number 223704. doi:10.1063/1.4842096 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.4842096
Abstract
For the first time, the I-V-T dataset of a Schottky diode has been accurately modelled, parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch-off and resistance, and ideality factors that are both heavily temperature and voltage dependent. A Ni/SiC Schottky diode is characterised at 2 K intervals from 20 to 320 K, which, at room temperature, displays low ideality factors (n < 1.01) that suggest that these diodes may be homogeneous. However, at cryogenic temperatures, excessively high (n > 8), voltage dependent ideality factors and evidence of the so-called "thermionic field emission effect" within a T0-plot, suggest significant inhomogeneity. Two models are used, each derived from Tung's original interactive parallel conduction treatment of barrier height inhomogeneity that can reproduce these commonly seen effects in single temperature I-V traces. The first model incorporates patch pinch-off effects and produces accurate and reliable fits above around 150 K, and at current densities lower than 10−5 A cm−2. Outside this region, we show that resistive effects within a given patch are responsible for the excessive ideality factors, and a second simplified model incorporating these resistive effects as well as pinch-off accurately reproduces the entire temperature range. Analysis of these fitting parameters reduces confidence in those fits above 230 K, and questions are raised about the physical interpretation of the fitting parameters. Despite this, both methods used are shown to be useful tools for accurately reproducing I-V-T data over a large temperature range.
Item Type: | Journal Article | ||||||||
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Subjects: | Q Science > QC Physics | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Library of Congress Subject Headings (LCSH): | Diodes, Schottky-barrier | ||||||||
Journal or Publication Title: | Journal of Applied Physics | ||||||||
Publisher: | American Institute of Physics | ||||||||
ISSN: | 0021-8979 | ||||||||
Official Date: | 9 December 2013 | ||||||||
Dates: |
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Volume: | Volume 114 | ||||||||
Number: | Number 22 | ||||||||
Article Number: | Article number 223704 | ||||||||
DOI: | 10.1063/1.4842096 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Date of first compliant deposit: | 27 December 2015 | ||||||||
Date of first compliant Open Access: | 27 December 2015 | ||||||||
Funder: | Royal Academy of Engineering (Great Britain), Engineering and Physical Sciences Research Council (EPSRC), European Commission (EC) | ||||||||
Grant number: | EP/J001074/1 (EPSRC), 227012 (EC) |
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