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Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
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Shah, V. A., Dobbie, A. (Andrew), Myronov, Maksym and Leadley, D. R. (David R.) (2010) Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates. Journal of Applied Physics, Vol.107 (No.6). article no. 064304. doi:10.1063/1.3311556 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.3311556
Abstract
The effect of compositional grading rate on reverse linear graded silicon germanium virtual substrates, grown by reduced pressure chemical vapor deposition, is investigated. For a Si(001)/Ge/RLG/Si0.22Ge0.78 buffer of 2.4 mu m total thickness the threading dislocation density (TDD) within the top, fully relaxed, Si0.22Ge0.78 layer is 4x10(6) cm(-2), with a surface roughness of 3 nm. For a thicker buffer, where the grading rate is reduced, a lower TDD of 3x10(6) cm(-2) and a surface roughness of 2 nm can be achieved. The characteristics of reverse graded Si0.22Ge0.78 virtual substrates are shown to be comparable to, or exceed, conventional buffer techniques, leading to thinner high-quality high Ge composition SiGe virtual substrates.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon, Germanium, Chemical vapor deposition, Semiconductors, Germanium alloys, Silicon alloys, Surface roughness | ||||
Journal or Publication Title: | Journal of Applied Physics | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0021-8979 | ||||
Official Date: | 15 March 2010 | ||||
Dates: |
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Volume: | Vol.107 | ||||
Number: | No.6 | ||||
Number of Pages: | 11 | ||||
Page Range: | article no. 064304 | ||||
DOI: | 10.1063/1.3311556 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Data sourced from Thomson Reuters' Web of Knowledge
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