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Blocking of indium incorporation by antimony in III-V-Sb nanostructures
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Sánchez, Ana M., Beltran, A. M., Beanland, R., Ben, T., Gass, M. H., de la Pena, F., Walls, M., Taboada, A. G., Ripalda, J. M. and Molina, S. I. (2010) Blocking of indium incorporation by antimony in III-V-Sb nanostructures. Nanotechnology, Vol.21 (No.14). Article: 145606. doi:10.1088/0957-4484/21/14/145606 ISSN 0957-4484.
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Official URL: http://dx.doi.org/10.1088/0957-4484/21/14/145606
Abstract
The addition of antimony to III-V nanostructures is expected to give greater freedom in bandgap engineering for device applications. One of the main challenges to overcome is the effect of indium and antimony surface segregation. Using several very high resolution analysis techniques we clearly demonstrate blocking of indium incorporation by antimony. Furthermore, indium incorporation resumes when the antimony concentration drops below a critical level. This leads to major differences between nominal and actual structures.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology Q Science > QC Physics |
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
| Journal or Publication Title: | Nanotechnology | ||||
| Publisher: | Institute of Physics Publishing Ltd. | ||||
| ISSN: | 0957-4484 | ||||
| Official Date: | 9 April 2010 | ||||
| Dates: |
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| Volume: | Vol.21 | ||||
| Number: | No.14 | ||||
| Number of Pages: | 8 | ||||
| Page Range: | Article: 145606 | ||||
| DOI: | 10.1088/0957-4484/21/14/145606 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Funder: | Spanish MCI, Junta de Andalucia, Science City Research Alliance, HEFCE Strategic Development Fund | ||||
| Grant number: | TEC2008-06756-C03-02/TEC, TEP-120 |
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