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Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction
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Gammon, P. M., Pérez-Tomás, Amador, Jennings, M. R., Sánchez, Ana M., Fisher, Craig A., Thomas, Stephen M., Donnellan, Benedict T. and Mawby, P. A. (Philip A.) (2013) Bipolar conduction across a wafer bonded p-n Si/SiC heterojunction. Materials Science Forum, 740-742 . pp. 1006-1009. doi:10.4028/www.scientific.net/MSF.740-742.1006 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Abstract
This paper describes the physical and electrical properties of a p-n Si/on-axis SiC vertical heterojunction rectifier. A thin 400nm p-type silicon layer was wafer-bonded to a commercial on-axis SiC substrate by room temperature hydrophilic wafer bonding. Transmission electron microscopy was used to identify the crystallographic orientation as (0001)SiC//(001)Si and to reveal an amorphous interfacial layer. Electrical tests performed on the p-n heterodiodes revealed that, after an additional 1000oC anneal, the rectifier exhibit remarkably low leakage current (10nA/cm2 at an anode voltage of V=-6V), improved on-resistance due to bipolar injection and a turn-on voltage close to the p-n heterojunction theoretical value of 2.4V.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd. | ||||
ISSN: | 1662-9752 | ||||
Official Date: | January 2013 | ||||
Dates: |
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Volume: | 740-742 | ||||
Page Range: | pp. 1006-1009 | ||||
DOI: | 10.4028/www.scientific.net/MSF.740-742.1006 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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