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New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology
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Mironov, O. A., Hassan, A. H. A., Uhlarz, M., Kiatgamolchai, S., Dobbie, A. (Andrew), Morris, R. J. H. (Richard J. H.), Halpin, John E., Rhead, S., Allred, Phil, Myronov, Maksym, Gabani, S., Berkutov, I. B. and Leadley, D. R. (David R.) (2014) New RP-CVD grown ultra-high performance selectively B-doped pure-Ge 20 nm QWs on (100)Si as basis material for post-Si CMOS technology. Physica Status Solidi (c), Volume 11 (Number 1). pp. 61-64. doi:10.1002/pssc.201300164
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Official URL: http://dx.doi.org/10.1002/pssc.201300164
Abstract
Magnetotransport studies at low and room temperature are presented for two-dimensional hole gases (2DHG) formed in fully strained germanium (sGe) quantum wells (QW). Two designs of modulation doped heterostructure grown by reduced pressure chemical vapour deposition (RP-CVD) were used and included a normal structure (doping above the Ge channel and inverted structure (doping beneath the Ge channel). The mobility (μH) for the normal structure was measured to be 1.34×106 cm2/Vs with a sheet density (ps) of 2.9×1011cm-2at 1.5 K, and μH= 3970 cm2/Vs and ps ∼1×1011cm-2 for room temperature, determined from simulation using the Maximum Entropy-Mobility Spectrum Analysis (ME-MSA) method.
For the inverted structure a μH of 4.96×105 cm2/Vs and ps of 5.25×1011cm-2was measured at 90 mK. From the temperature dependent amplitude of Shubnikov de Haas oscillations, the normal structure was found to have a very low effective mass (m*) value of 0.063 m0 and a ratio of transport to quantum lifetime (α) of ∼78. This extremely high α is indicative of the carrier transport being dominated by small angle scattering from remote impurities i.e. a sample having an extremely low background impurity level and very smooth hetero-interfaces. The inverted structure had an m*of 0.069 m0 and α ∼29, which also indicates exceedingly high quality material.
| Item Type: | Journal Article | ||||||||||
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| Divisions: | Faculty of Science > Physics | ||||||||||
| Journal or Publication Title: | Physica Status Solidi (c) | ||||||||||
| Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||||||||
| ISSN: | 18626351 | ||||||||||
| Official Date: | 21 January 2014 | ||||||||||
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| Volume: | Volume 11 | ||||||||||
| Number: | Number 1 | ||||||||||
| Page Range: | pp. 61-64 | ||||||||||
| DOI: | 10.1002/pssc.201300164 | ||||||||||
| Status: | Peer Reviewed | ||||||||||
| Publication Status: | Published | ||||||||||
| Access rights to Published version: | Open Access |
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