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On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts
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Jennings, M. R., Fisher, Craig A., Walker, David, Sánchez, Ana M., Pérez-Tomás, Amador, Hamilton, Dean P., Gammon, P. M., Burrows, S. E. (Susan E.), Thomas, Stephen M., Sharma, Yogesh K., Li, Fan and Mawby, P. A. (Philip A.) (2014) On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts. Materials Science Forum, Volume 778-780 . pp. 693-696. doi:10.4028/www.scientific.net/MSF.778-780.693 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Abstract
This paper presents a detailed physical and electrical analysis of 4H-SiC ohmic contacts to p-type material, the main aim being to examine their ruggedness under high temperature conditions. XRD, FIB-TEM and SEM are techniques that have been utilized to examine the microstructure and interface properties respectively. A detailed physical study revealed the presence of a crystalline hexagonal Ti layer orientated in the same direction as the 4H-SiC epitaxial layer. This factor seems to be important in terms of electrical performance, having the lowest measured specific contact resistivity of 1x10-6 Ωcm2. We attribute this to the optimized formation of Ti3SiC2 at the metal/SiC interface. An initial high temperature study shows thermionic emission occurring across the metal/semiconductor junction.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering Faculty of Science, Engineering and Medicine > Science > Physics |
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Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd. | ||||
ISSN: | 1662-9752 | ||||
Official Date: | February 2014 | ||||
Dates: |
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Volume: | Volume 778-780 | ||||
Page Range: | pp. 693-696 | ||||
DOI: | 10.4028/www.scientific.net/MSF.778-780.693 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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