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Synthesis and characterization of nanomaterials of the topological crystalline insulator SnTe

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Saghir, Mohammad, Lees, Martin R., York, Stephen J. and Balakrishnan, Geetha (2014) Synthesis and characterization of nanomaterials of the topological crystalline insulator SnTe. Crystal Growth & Design, Volume 14 (Number 4). pp. 2009-2013. doi:10.1021/cg500122b ISSN 1528-7483.

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Official URL: http://dx.doi.org/10.1021/cg500122b

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Abstract

A new class of materials, topological crystalline insulators (TCIs), have been shown to possess exotic surface state properties that are protected by mirror symmetry. These surface features can be enhanced if the surface-area-to-volume ratio of the material increases or the signal arising from the bulk of the material can be suppressed. We report the experimental procedures to obtain high-quality crystal boules of the TCI, SnTe, from which nanowires and microcrystals can be produced by the vapor–liquid–solid (VLS) technique. Detailed characterization measurements of the bulk crystals as well as of the nanowires and microcrystals produced are presented. The nanomaterials produced were found to be stoichiometrically similar to the source material used. Electron backscatter diffraction (EBSD) shows that the majority of the nanocrystals grow in the vicinal {001} direction to the growth normal. The growth conditions to produce the different nanostructures of SnTe have been optimized.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Crystal Growth & Design
Publisher: American Chemical Society
ISSN: 1528-7483
Official Date: 4 March 2014
Dates:
DateEvent
4 March 2014Published
23 January 2014Submitted
Volume: Volume 14
Number: Number 4
Page Range: pp. 2009-2013
DOI: 10.1021/cg500122b
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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