Gammon, P. M., Fisher, Craig A., Shah, V. A., Jennings, M. R., Pérez-Tomás, Amador, Burrows, S. E. (Susan E.), Myronov, Maksym, Leadley, D. R. (David R.) and Mawby, P. A. (Philip A.) (2014) The cryogenic testing and characterisation of SiC diodes. Materials Science Forum, 778-780 . pp. 863-866. doi:10.4028/www.scientific.net/MSF.778-780.863

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

High-resolution cryogenic performance testing is carried out on 4H-SiC PiN and Schottky diodes. At 2K intervals from 20 to 320K, current-voltage tests are performed to extract static characteristics such as turn-on, ideality factor and barrier height from across the temperature range. We also analyse the performance of the diodes within a low current/voltage switching circuit across the same temperature range using an inductive switching setup. Both diodes suffer markedly increased conduction losses at the lower temperatures, the PiN diode losing all the benefits of conductivity modulation as dopant freezes-out, reducing its series resistance. However, minor gains in the total switching losses are expected at low temperature due to faster switching speeds.

Item Type:	Journal Article
Divisions:	Faculty of Science > Engineering Faculty of Science > Physics
Journal or Publication Title:	Materials Science Forum
Publisher:	Trans Tech Publications Ltd.
ISSN:	1662-9752
Official Date:	February 2014
Dates:	Date Event February 2014 Published
Volume:	778-780
Page Range:	pp. 863-866
DOI:	10.4028/www.scientific.net/MSF.778-780.863
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item