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Ge-on-Si single-photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm
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Warburton, Ryan E., Intermite, Giuseppe, Myronov, Maksym, Allred, Phil, Leadley, D. R. (David R.), Gallacher, Kevin, Paul, Douglas J. (Professor of Semiconductor Devices), Pilgrim, Neil J., Lever, Leon J. M., Ikonic, Zoran, Kelsall, Robert W., Huante-Ceron, Edgar, Knights, Andrew P. and Buller, G. S. (Gerald S.) (2013) Ge-on-Si single-photon avalanche diode detectors : design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm. IEEE Transactions on Electron Devices, Volume 60 (Number 11). pp. 3807-3813. doi:10.1109/TED.2013.2282712 ISSN 0018-9383.
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Official URL: http://dx.doi.org/10.1109/TED.2013.2282712
Abstract
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented. At 100 K, a single-photon detection efficiency of 4% at 1310 nm wavelength was measured with a dark count rate of ~ 6 megacounts/s, resulting in the lowest reported noise-equivalent power for a Ge-on-Si single-photon avalanche diode detector (1×10-14 WHz-1/2). The first report of 1550 nm wavelength detection efficiency measurements with such a device is presented. A jitter of 300 ps was measured, and preliminary tests on after-pulsing showed only a small increase (a factor of 2) in the normalized dark count rate when the gating frequency was increased from 1 kHz to 1 MHz. These initial results suggest that optimized devices integrated on Si substrates could potentially provide performance comparable to or better than that of many commercially available discrete technologies.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Photodiodes, Germanium diodes | ||||
Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||
Publisher: | Institute of Electrical and Electronics Engineers | ||||
ISSN: | 0018-9383 | ||||
Official Date: | November 2013 | ||||
Dates: |
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Volume: | Volume 60 | ||||
Number: | Number 11 | ||||
Page Range: | pp. 3807-3813 | ||||
DOI: | 10.1109/TED.2013.2282712 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Date of first compliant deposit: | 27 December 2015 | ||||
Date of first compliant Open Access: | 27 December 2015 | ||||
Open Access Version: |
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