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'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs

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Tong, C. F., Mawby, P. A. and Covington, James A. (2009) 'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs. In: 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, Spain, September 08-10, 2009. Published in: EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9 pp. 5471-5475. ISBN 978-1-4244-4432-8.

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Abstract

This paper presents a 30V range 'Field Balanced' Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Q(gd) Of 1.0 nC mm(-2) for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 m Omega nC to around 6.40 m Omega nC. From this investigation, it has been demonstrated that the 'Field Balanced' on a a Split-Gate structure can give a good R-dsON vs Q(gd) trade off. The exceptionally low Q(gd) will allow the 'Field Balanced' structure to achieve a good efficiency even in high switching frequency converter.

Item Type: Conference Item (Paper)
Subjects: Q Science > QA Mathematics > QA76 Electronic computers. Computer science. Computer software
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9
Publisher: IEEE
ISBN: 978-1-4244-4432-8
Official Date: 2009
Dates:
DateEvent
2009Published
Number of Pages: 5
Page Range: pp. 5471-5475
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 13th European Conference on Power Electronics and Applications (EPE 2009)
Type of Event: Conference
Location of Event: Barcelona, Spain
Date(s) of Event: September 08-10, 2009

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