Tong, C. F., Mawby, P. A. (Philip A.) and Covington, James A., 1973- (2009) 'Field balanced' SG-RSO structure showing tremendous potential for low voltage trench MOSFETs. In: 13th European Conference on Power Electronics and Applications (EPE 2009), Barcelona, Spain, September 08-10, 2009. Published in: EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9 pp. 5471-5475.

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Abstract

This paper presents a 30V range 'Field Balanced' Split-Gate RSO (Resurf Stepped Oxide) MOSFET showing extremely low Q(gd) Of 1.0 nC mm(-2) for the first time. By introducing a low doped region on an optimised 30V Split-Gate RSO MOSFET, the Figure of Merit (FOM) improves from 8.09 m Omega nC to around 6.40 m Omega nC. From this investigation, it has been demonstrated that the 'Field Balanced' on a a Split-Gate structure can give a good R-dsON vs Q(gd) trade off. The exceptionally low Q(gd) will allow the 'Field Balanced' structure to achieve a good efficiency even in high switching frequency converter.

Item Type:	Conference Item (Paper)
Subjects:	Q Science > QA Mathematics > QA76 Electronic computers. Computer science. Computer software T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	EPE: 2009 13th European Conference on Power Electronics and Applications, Vols.1-9
Publisher:	IEEE
ISBN:	978-1-4244-4432-8
Date:	2009
Number of Pages:	5
Page Range:	pp. 5471-5475
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	13th European Conference on Power Electronics and Applications (EPE 2009)
Type of Event:	Conference
Location of Event:	Barcelona, Spain
Date(s) of Event:	September 08-10, 2009
URI:	http://wrap.warwick.ac.uk/id/eprint/6287

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