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Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors
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Thomas, Stephen M., Jennings, M. R., Sharma, Yogesh K., Fisher, Craig A. and Mawby, P. A. (Philip A.) (2014) Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors. Materials Science Forum, Volume 778-780 . pp. 599-602. doi:10.4028/www.scientific.net/MSF.778-780.599 ISSN 1662-9752.
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Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Abstract
Despite the material advantages of Silicon-Carbide (SiC), the on resistance of 4H-SiC metal-oxide-semiconductor transistors are severely degraded by high trap densities near the oxide/SiC interface (Dit). In this work, the effect of the oxidation ambient (oxygen flow rates of 0.05 l/min-2.5 l/min) and oxidation temperature (1200°C-1600°C) on the Dit is investigated. The Dit was reduced by up to an order of magnitude using a combination of a low oxygen flow rate and a high temperature. The Dit was extracted from capacitance-voltage measurements made on MOS capacitors.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd. | ||||
ISSN: | 1662-9752 | ||||
Official Date: | February 2014 | ||||
Dates: |
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Volume: | Volume 778-780 | ||||
Page Range: | pp. 599-602 | ||||
DOI: | 10.4028/www.scientific.net/MSF.778-780.599 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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