The Library
Thin PSG process for 4H-SiC MOSFET
Tools
Sharma, Yogesh K., Ahyi, Ayayi C., Isaacs-Smith, Tamara, Modic, Aaron, Xu, Yi, Granfukel, Eric, Jennings, M. R., Fisher, Craig A., Thomas, Stephen M., Mawby, P. A. (Philip A.), Dhar, Sarit, Feldman, Leonard C. and Williams, John (2014) Thin PSG process for 4H-SiC MOSFET. Materials Science Forum, Volume 778-780 . pp. 513-516. doi:10.4028/www.scientific.net/MSF.778-780.513 ISSN 1662-9752.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.7...
Abstract
The use of phosphorous as a passivating agent for the SiO2/4H-SiC interface increases the field effect channel mobility of 4H-SiC MOSFET to twice the value, 30-40cm2/V-s, that is obtained with a high temperature anneal in nitric oxide (NO). A solid SiP2O7 planar diffusion source is used to produce P2O5 for the passivation of the interface. Incorporation of phosphorous into SiO2 leads to formation of phosphosilicate glass (PSG) which is known to be a polar material causes device instability. With a new modified thin phosphorous (P) passivation process, as described in this abstract, we can improve the stability of MOSFETs significantly with mobility around 75cm2/V.s.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | Materials Science Forum | ||||
Publisher: | Trans Tech Publications Ltd. | ||||
ISSN: | 1662-9752 | ||||
Official Date: | February 2014 | ||||
Dates: |
|
||||
Volume: | Volume 778-780 | ||||
Page Range: | pp. 513-516 | ||||
DOI: | 10.4028/www.scientific.net/MSF.778-780.513 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |