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Bulk transport measurements in ZnO: the effect of surface electron layers

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Allen, M. W., Swartz, C. H., Myers, T. H., Veal, T. D. (Tim D.), McConville, C. F. (Chris F.) and Durbin, S. M. (2010) Bulk transport measurements in ZnO: the effect of surface electron layers. Physical Review B (Condensed Matter and Materials Physics), Vol.81 (No.7). Article: 075211. doi:10.1103/PhysRevB.81.075211

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Official URL: http://dx.doi.org/10.1103/PhysRevB.81.075211

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Abstract

Magnetotransport measurements and x-ray photoemission spectroscopy were used to investigate the surface conductivity of ZnO. Near-surface downward band bending, consistent with electron accumulation, was found on the polar and nonpolar faces of bulk ZnO single crystals. A significant polarity effect was observed in that the downward band bending was consistently stronger on the Zn-polar face and weaker on the O-polar face. The surface electron accumulation layer was found to significantly influence the electrical properties of high resistivity, hydrothermally grown bulk ZnO crystals at temperatures below 200 K, and is largely responsible for the anomalously low electron mobility reported for this material.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: February 2010
Dates:
DateEvent
February 2010Published
Volume: Vol.81
Number: No.7
Number of Pages: 6
Page Range: Article: 075211
DOI: 10.1103/PhysRevB.81.075211
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Office of Naval Research, WVNano Initiative, NSF Cooperative Agreement, State of Florida, DOE, Engineering and Physical Sciences Research Council (EPSRC)
Grant number: N00014-02-1-0974, DMR-0084173, EP/G004447/1 (EPSRC)

Data sourced from Thomson Reuters' Web of Knowledge

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