Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Use of atomistic phonon dispersion and Boltzmann transport formalism to study the thermal conductivity of narrow Si nanowires

Tools
- Tools
+ Tools

Karamitaheri, Hossein, Neophytou, Neophytos and Kosina, Hans (2014) Use of atomistic phonon dispersion and Boltzmann transport formalism to study the thermal conductivity of narrow Si nanowires. Journal of Electronic Materials, Volume 43 (Number 6). pp. 1829-1836. doi:10.1007/s11664-013-2884-5 ISSN 0361-5235.

Research output not available from this repository.

Request-a-Copy directly from author or use local Library Get it For Me service.

Official URL: http://dx.doi.org/10.1007/s11664-013-2884-5

Request Changes to record.

Abstract

We study the thermal properties of ultra-narrow silicon nanowires (NW) with diameters from 3 nm to 12 nm. We use the modified valence-force-field method for computation of phononic dispersion and the Boltzmann transport equation for calculation of phonon transport. Phonon dispersion in ultra-narrow 1D structures differs from dispersion in the bulk and dispersion in thicker NWs, which leads to different thermal properties. We show that as the diameter of the NW is reduced the density of long-wavelength phonons per cross section area increases, which increases their relative importance in carrying heat compared with the rest of the phonon spectrum. This effect, together with the fact that low-frequency, low-wavevector phonons are affected less by scattering and have longer mean-free-paths than phonons in the rest of the spectrum, leads to a counter-intuitive increase in thermal conductivity as the diameter is reduced to the sub-ten-nanometers range. This behavior is retained in the presence of moderate boundary scattering.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Journal or Publication Title: Journal of Electronic Materials
Publisher: Springer New York LLC
ISSN: 0361-5235
Official Date: 1 June 2014
Dates:
DateEvent
1 June 2014Published
Volume: Volume 43
Number: Number 6
Page Range: pp. 1829-1836
DOI: 10.1007/s11664-013-2884-5
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us