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Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core–shell nanowire photocathode on silicon substrates
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Wu, Jiang, Li, Yanbo, Kubota, Jun, Domen, Kazunari, Aagesen, Martin, Ward, Thomas, Sánchez, Ana M., Beanland, R., Zhang, Yunyan, Tang, Mingchu, Hatch, Sabina, Seeds, Alwyn and Liu, Huiyun (2014) Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core–shell nanowire photocathode on silicon substrates. Nano Letters, Volume 14 (Number 4). pp. 2013-2018. doi:10.1021/nl500170m ISSN 1530-6984.
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Official URL: http://dx.doi.org/10.1021/nl500170m
Abstract
We present the wafer-scale fabrication of self-catalyzed p–n homojunction 1.7 eV GaAsP core–shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm2 at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III–V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Nano Letters | ||||
Publisher: | American Chemical Society | ||||
ISSN: | 1530-6984 | ||||
Official Date: | 28 March 2014 | ||||
Dates: |
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Volume: | Volume 14 | ||||
Number: | Number 4 | ||||
Page Range: | pp. 2013-2018 | ||||
DOI: | 10.1021/nl500170m | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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