Wu, Jiang, Li, Yanbo, Kubota, Jun, Domen, Kazunari, Aagesen, Martin, Ward, Thomas, Sánchez, Ana M., Beanland, R., Zhang, Yunyan, Tang, Mingchu, Hatch, Sabina, Seeds, Alwyn and Liu, Huiyun (2014) Wafer-scale fabrication of self-catalyzed 1.7 eV GaAsP core–shell nanowire photocathode on silicon substrates. Nano Letters, Volume 14 (Number 4). pp. 2013-2018. doi:10.1021/nl500170m ISSN 1530-6984.

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Abstract

We present the wafer-scale fabrication of self-catalyzed p–n homojunction 1.7 eV GaAsP core–shell nanowire photocathodes grown on silicon substrates by molecular beam epitaxy with the incorporation of Pt nanoparticles as hydrogen evolution cocatalysts. Under AM 1.5G illumination, the GaAsP nanowire photocathode yielded a photocurrent density of 4.5 mA/cm2 at 0 V versus a reversible hydrogen electrode and a solar-to-hydrogen conversion efficiency of 0.5%, which are much higher than the values previously reported for wafer-scale III–V nanowire photocathodes. In addition, GaAsP has been found to be more resistant to photocorrosion than InGaP. These results open up a new approach to develop efficient tandem photoelectrochemical devices via fabricating GaAsP nanowires on a silicon platform.

Item Type:	Journal Article
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	Nano Letters
Publisher:	American Chemical Society
ISSN:	1530-6984
Official Date:	28 March 2014
Dates:	Date Event 28 March 2014 Published
Volume:	Volume 14
Number:	Number 4
Page Range:	pp. 2013-2018
DOI:	10.1021/nl500170m
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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