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Tensile strained Ge membranes

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Shah, V. A., Trushkevych, Oksana, Myronov, Maksym, Rhead, Stephen, Halpin, John E., Edwards, R. S. (Rachel Sian) and Leadley, D. R. (David R.) (2014) Tensile strained Ge membranes. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014 , Stockholm, Sweden, 7-9 April 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 137-140. ISSN 2330-5738. doi:10.1109/ULIS.2014.6813917

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Official URL: http://dx.doi.org/10.1109/ULIS.2014.6813917

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Abstract

Germanium membranes of 50-1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The biaxial tensile strain in these membranes has been measured by high-resolution X-ray diffraction and by ultrasonic vibrational spectroscopy. The later technique also shows that membranes have a Q-factor of ~3000 at low temperature. The stain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an rms roughness of below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science > Physics
Journal or Publication Title: International Conference on Ultimate Integration on Silicon
Publisher: IEEE Computer Society
ISSN: 2330-5738
Book Title: 2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
Official Date: 2014
Dates:
DateEvent
2014UNSPECIFIED
Page Range: pp. 137-140
DOI: 10.1109/ULIS.2014.6813917
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014
Type of Event: Conference
Location of Event: Stockholm, Sweden
Date(s) of Event: 7-9 April 2014

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