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Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition

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Nguyen, Van Huy, Myronov, Maksym, Allred, Phil, Halpin, John E., Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2014) Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 121-124. ISSN 2330-5738. doi:10.1109/ULIS.2014.6813913

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Item Type: Conference Item (Paper)
Divisions: Faculty of Science > Physics
Journal or Publication Title: International Conference on Ultimate Integration on Silicon
Publisher: IEEE Computer Society
ISSN: 2330-5738
Official Date: 2014
Dates:
DateEvent
2014UNSPECIFIED
Page Range: pp. 121-124
DOI: 10.1109/ULIS.2014.6813913
Status: Peer Reviewed
Conference Paper Type: Paper
Title of Event: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014
Type of Event: Conference

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