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Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition
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Nguyen, Van Huy, Myronov, Maksym, Allred, Phil, Halpin, John E., Dobbie, A. (Andrew) and Leadley, D. R. (David R.) (2014) Developments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition. In: 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014. Published in: International Conference on Ultimate Integration on Silicon pp. 121-124. ISSN 2330-5738. doi:10.1109/ULIS.2014.6813913
Research output not available from this repository, contact author.| Item Type: | Conference Item (Paper) | ||||
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| Divisions: | Faculty of Science > Physics | ||||
| Journal or Publication Title: | International Conference on Ultimate Integration on Silicon | ||||
| Publisher: | IEEE Computer Society | ||||
| ISSN: | 2330-5738 | ||||
| Official Date: | 2014 | ||||
| Dates: |
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| Page Range: | pp. 121-124 | ||||
| DOI: | 10.1109/ULIS.2014.6813913 | ||||
| Status: | Peer Reviewed | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 15th International Conference on Ultimate Integration on Silicon (ULIS), 2014 | ||||
| Type of Event: | Conference |
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