King, P. D. C., McKenzie, I. and Veal, T. D. (Tim D.) (2010) Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity. Applied Physics Letters, Vol.96 (No.6). Article: 062110. doi:10.1063/1.3309694

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Abstract

The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow donor, with an effective donor depth of 15 < E-D < 30 meV and a hyperfine splitting of 0.13 +/- 0.01 MHz. This is in contrast to the deep level observed in the majority of semiconductors but supports the recent suggestion that muonium should be a shallow donor across the class of transparent conducting oxides. These observations suggest that hydrogen will also be a shallow donor in Ga2O3, with important implications both for unintentional conductivity and deliberate n-type doping of this material.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	8 February 2010
Dates:	Date Event 8 February 2010 Published
Volume:	Vol.96
Number:	No.6
Number of Pages:	3
Page Range:	Article: 062110
DOI:	10.1063/1.3309694
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Engineering and Physical Sciences Research Council (EPSRC), Science and Technology Facilities Council (Great Britain) (STFC)
Grant number:	EP/G004447/1 (EPSRC)

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