Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity
King, P. D. C., McKenzie, I. and Veal, T. D. (Tim D.). (2010) Observation of shallow-donor muonium in Ga2O3: evidence for hydrogen-induced conductivity. Applied Physics Letters, Vol.96 (No.6). Article: 062110. ISSN 0003-6951Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.3309694
The electrical nature of muonium in the transparent conducting oxide material Ga2O3 is investigated via muon-spin rotation and relaxation spectroscopy. It is found to be a shallow donor, with an effective donor depth of 15 < E-D < 30 meV and a hyperfine splitting of 0.13 +/- 0.01 MHz. This is in contrast to the deep level observed in the majority of semiconductors but supports the recent suggestion that muonium should be a shallow donor across the class of transparent conducting oxides. These observations suggest that hydrogen will also be a shallow donor in Ga2O3, with important implications both for unintentional conductivity and deliberate n-type doping of this material.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Divisions:||Faculty of Science > Physics|
|Journal or Publication Title:||Applied Physics Letters|
|Publisher:||American Institute of Physics|
|Date:||8 February 2010|
|Number of Pages:||3|
|Page Range:||Article: 062110|
|Access rights to Published version:||Restricted or Subscription Access|
|Funder:||Engineering and Physical Sciences Research Council (EPSRC), Science and Technology Facilities Council (Great Britain) (STFC)|
|Grant number:||EP/G004447/1 (EPSRC)|
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