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Electrical transport properties of CaB6
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Stankiewicz, Jolanta, Sesé, Javier, Balakrishnan, Geetha and Fisk, Zachary (2014) Electrical transport properties of CaB6. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). 155128. doi:10.1103/PhysRevB.90.155128
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Official URL: http://dx.doi.org/10.1103/PhysRevB.90.155128
Abstract
We report results from a systematic electron-transport study in a broad temperature range on 12 CaB6 single crystals. None of the crystals were intentionally doped. The different carrier densities observed presumably arise from slight variations in the Ca:B stoichiometry. In these crystals, the variation of the electrical resistivity and of the Hall effect with temperature can be consistently accounted for by the model we propose, in which B-antisite defects (B atom replacing Ca atom) are “amphoteric.” The magnetotransport measurements reveal that most of the samples we have studied are close to a metal-insulator transition at low temperatures. The magnetoresistance changes smoothly from negative—for weakly metallic samples—to positive values—for samples in a localized regime.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Divisions: | Faculty of Science > Physics | ||||||
| Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) | ||||||
| Publisher: | American Physical Society | ||||||
| ISSN: | 1098-0121 | ||||||
| Official Date: | 24 October 2014 | ||||||
| Dates: |
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| Volume: | Volume 90 | ||||||
| Number: | Number 15 | ||||||
| Article Number: | 155128 | ||||||
| DOI: | 10.1103/PhysRevB.90.155128 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access |
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