Skip to content Skip to navigation
University of Warwick
  • Study
  • |
  • Research
  • |
  • Business
  • |
  • Alumni
  • |
  • News
  • |
  • About

University of Warwick
Publications service & WRAP

Highlight your research

  • WRAP
    • Home
    • Search WRAP
    • Browse by Warwick Author
    • Browse WRAP by Year
    • Browse WRAP by Subject
    • Browse WRAP by Department
    • Browse WRAP by Funder
    • Browse Theses by Department
  • Publications Service
    • Home
    • Search Publications Service
    • Browse by Warwick Author
    • Browse Publications service by Year
    • Browse Publications service by Subject
    • Browse Publications service by Department
    • Browse Publications service by Funder
  • Help & Advice
University of Warwick

The Library

  • Login
  • Admin

Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices

Tools
- Tools
+ Tools

Preziosi, Daniele, Fina, Ignasi, Pippel, Eckhard, Hesse, Dietrich, Marti, Xavi, Bern, Francis, Ziese, Michael and Alexe, M. (Marin) (2014) Tailoring the interfacial magnetic anisotropy in multiferroic field-effect devices. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 12). 125155. doi:10.1103/PhysRevB.90.125155

Research output not available from this repository, contact author.
Official URL: http://dx.doi.org/10.1103/PhysRevB.90.125155

Request Changes to record.

Abstract

Ferroelectric field-effect devices based on perovskite oxide materials offer a new possibility to exploit emergent interfacial effects such as the electrostatic modification of the transport and magnetic properties of strongly correlated materials and to prove the magneto-electric coupling at the interface between the two different ferroic materials. Here we report on the reversible modulation of the interfacial magnetic and magnetotransport properties of La0.825Sr0.175MnO3 thin films induced by switching the ferroelectric polarization of a top PbZr0.2Ti0.8O3 layer. Anisotropic magnetoresistance (AMR) measurements were performed applying a magnetic field H in a plane perpendicular to the current density. By rotating H from the out-of-plane towards the in-plane direction, upon the ferroelectric polarization switching, a modulation of the normalized AMR amplitude was achieved. The dynamical electrostatic coupling at the interface of the two oxides is responsible for a reconstruction of the Mn3deg orbitals which in turn affects the surface magnetic anisotropy of the magneto-electric system. The present work might have a broader impact, including in the field of multiferroic tunnel junctions, due to a better understanding of the coupling at the interface of the two ferroic oxides where the influence of the polarization on the magnetic degree of freedom is accomplished.

Item Type: Journal Article
Divisions: Faculty of Science > Physics
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 29 September 2014
Dates:
DateEvent
29 September 2014Published
30 July 2014Submitted
Volume: Volume 90
Number: Number 12
Article Number: 125155
DOI: 10.1103/PhysRevB.90.125155
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

Request changes or add full text files to a record

Repository staff actions (login required)

View Item View Item
twitter

Email us: wrap@warwick.ac.uk
Contact Details
About Us