Bhatnagar, Akash, Kim, Young Heon, Hesse, Dietrich and Alexe, M. (Marin) (2014) Sub-band level-assisted photoconduction in epitaxial BiFeO3 films. Applied Physics Letters, Volume 105 (Number 12). 122905. doi:10.1063/1.4896508

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Abstract

Sub-band level assisted conduction mechanisms are well known in the field of semiconducting materials. In this work, we explicitly show the validity of such a mechanism in the multiferrroic material BiFeO3 (BFO). Our study is based on two different systems of epitaxial thin films of BFO, relaxed and strained. By analyzing the spectral distribution of the photoresponse from both the systems, the role of the sub-band levels in the photoconductive phenomena becomes evident. Additionally, the influence of epitaxial strain on the trapping activity of these levels is also observed. A model is proposed by taking into account the reversal of the role of a sub-band gap level, i.e., from a trapping to a ground state.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Library of Congress Subject Headings (LCSH):	Bismuth compounds, Photoconductivity
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	2014
Dates:	Date Event 2014 Published 25 September 2014 Available 12 September 2014 Accepted 11 July 2014 Submitted
Date of first compliant deposit:	28 December 2015
Volume:	Volume 105
Number:	Number 12
Article Number:	122905
DOI:	10.1063/1.4896508
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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