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Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate
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Patchett, David, Myronov, Maksym, Rhead, Stephen, Halpin, John E. and Leadley, D. R. (David R.) (2014) Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate. In: 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, Singapore, 2-4 Jun 2014 pp. 71-72. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874654
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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874654
Abstract
High Sn fraction GeSn has been grown by RP-CVD with SnCl4. However, challenges remain in creating device quality material suitable for subsequent growth. Surface segregation of tin, which increases with increased tin fraction, raises doubts about the suitability of GeSn as a platform for subsequent growth. Surface segregation may contribute to difficulties of achieving high growth rates and the growth of alloys with an increased tin fraction. The variability of tin content with depth necessitates the use of specialized compositional characterization such as SIMS. Growth of fully relaxed GeSn epilayers remains elusive, with many grown layers are partially relaxed. However, full relaxation is necessary for a direct bandgap material.
| Item Type: | Conference Item (Paper) | ||||
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| Divisions: | Faculty of Science > Physics | ||||
| Publisher: | IEEE Computer Society | ||||
| ISBN: | 9781479954278 | ||||
| Book Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
| Official Date: | 2014 | ||||
| Dates: |
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| Page Range: | pp. 71-72 | ||||
| DOI: | 10.1109/ISTDM.2014.6874654 | ||||
| Status: | Peer Reviewed | ||||
| Publication Status: | Published | ||||
| Access rights to Published version: | Restricted or Subscription Access | ||||
| Conference Paper Type: | Paper | ||||
| Title of Event: | 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014 | ||||
| Type of Event: | Conference | ||||
| Location of Event: | Singapore | ||||
| Date(s) of Event: | 2-4 Jun 2014 | ||||
| Related URLs: |
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