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Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy
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Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. and Airey, R.. (2010) Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy. Applied Physics Letters, Vol.96 (No.5). Article: 052115. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.3306737
Abstract
We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1-xNx, with x up to 0.6%. The sharp increase in the conductivity of n-type InAs1-xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates the hot electron dynamics. This observation, combined with the reduction in the band gap energy by the N-atoms, suggest prospects for the use of this narrow gap alloy in infrared avalanche photodiodes.
| Item Type: | Journal Article |
|---|---|
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Physics |
| Journal or Publication Title: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| Official Date: | 1 February 2010 |
| Volume: | Vol.96 |
| Number: | No.5 |
| Number of Pages: | 3 |
| Page Range: | Article: 052115 |
| Identification Number: | 10.1063/1.3306737 |
| Status: | Peer Reviewed |
| Publication Status: | Published |
| Access rights to Published version: | Restricted or Subscription Access |
| Funder: | Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC) |
| URI: | http://wrap.warwick.ac.uk/id/eprint/6506 |
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