Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. and Airey, R.. (2010) Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy. Applied Physics Letters, Vol.96 (No.5). Article: 052115. ISSN 0003-6951

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Abstract

We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1-xNx, with x up to 0.6%. The sharp increase in the conductivity of n-type InAs1-xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates the hot electron dynamics. This observation, combined with the reduction in the band gap energy by the N-atoms, suggest prospects for the use of this narrow gap alloy in infrared avalanche photodiodes.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	Applied Physics Letters
Publisher:	American Institute of Physics
ISSN:	0003-6951
Official Date:	1 February 2010
Dates:	Date Event 1 February 2010 Published
Volume:	Vol.96
Number:	No.5
Number of Pages:	3
Page Range:	Article: 052115
Identification Number:	10.1063/1.3306737
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Funder:	Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC)
URI:	http://wrap.warwick.ac.uk/id/eprint/6506

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