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Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy

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Makarovsky, O., Feu, W. H. M., Patane, A., Eaves, L., Zhuang, Q. D., Krier, A., Beanland, R. and Airey, R. (2010) Hot electron transport and impact ionization in the narrow energy gap InAs1-xNx alloy. Applied Physics Letters, Vol.96 (No.5). Article: 052115. doi:10.1063/1.3306737

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Official URL: http://dx.doi.org/10.1063/1.3306737

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Abstract

We report an experimental study of hot electron dynamics in the narrow band gap dilute nitride alloy, InAs1-xNx, with x up to 0.6%. The sharp increase in the conductivity of n-type InAs1-xNx at applied electric fields above 1 kV/cm demonstrates that impact ionization dominates the hot electron dynamics. This observation, combined with the reduction in the band gap energy by the N-atoms, suggest prospects for the use of this narrow gap alloy in infrared avalanche photodiodes.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Physics
Journal or Publication Title: Applied Physics Letters
Publisher: American Institute of Physics
ISSN: 0003-6951
Official Date: 1 February 2010
Dates:
DateEvent
1 February 2010Published
Volume: Vol.96
Number: No.5
Number of Pages: 3
Page Range: Article: 052115
DOI: 10.1063/1.3306737
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Funder: Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC)

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