Myronov, Maksym, Rhead, Stephen, Colston, Gerard B. and Leadley, D. R. (David R.) (2014) RP-CVD growth of high carbon content Si1−xCx epilayers using disilane and trimethylsilane precursors. In: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 69-70. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874653

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Abstract

We have demonstrated Si1-xCx epilayers growth by RP-CVD and using Disilane and Trimethylsilane precursors. Very high Carbon content, up to 2.4%, has been obtained. It is close to the best results obtained using more expensive precursors. Use of the RP-CVD is vital from an industrial standpoint as, although MBE offers greater control over growth parameters, the RP-CVD is one of the only viable methods of mass epitaxial growth.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science > Physics
Journal or Publication Title:	2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Publisher:	IEEE
ISBN:	9781479954278
Book Title:	2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Official Date:	2014
Dates:	Date Event 2014 Published
Page Range:	pp. 69-70
DOI:	10.1109/ISTDM.2014.6874653
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Type of Event:	Conference
Location of Event:	Singapore
Date(s) of Event:	2-4 Jun 2014
Related URLs:	Organisation

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