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Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate
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Myronov, Maksym, Morrison, Christopher, Halpin, John E., Rhead, Stephen, Foronda, Jamie and Leadley, D. R. (David R.) (2014) Revealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate. In: Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International, Singapore, 2-4 Jun 2014. Published in: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) pp. 11-12. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874628
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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874628
Abstract
We report an extremely high 2DHG mobility of 4500 cm2V-1s-1 and 777000 cm2V-1s-1 at 293 and 0.333 K, respectively, in a compressively strained Ge QW grown by industrial type RP-CVD on a standard Si(001) substrate. The obtained 2DHG mobility is substantially higher than those reported so far and in structures grown by research type epitaxial growth techniques, i.e. SS-MBE and LEPE-CVD. Also, the room and low temperature hole mobilities obtained are the highest not only among the group-IV Si and Ge based semiconductors, but also among p-type III-V and II-VI ones. These results demonstrate the very high quality of the strained Ge QW epilayers grown by RP-CVD and the huge potential for further applications of such materials in modern and future CMOS, p-MOSFET and p-MODFET electronic devices. The 2DHG mobility is already sufficiently high to fabricate sub-100 nm electronic devices and demonstrate ballistic transport therein at or around room temperature.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781479954278 | ||||
Book Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Official Date: | 2014 | ||||
Dates: |
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Page Range: | pp. 11-12 | ||||
DOI: | 10.1109/ISTDM.2014.6874628 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International | ||||
Type of Event: | Conference | ||||
Location of Event: | Singapore | ||||
Date(s) of Event: | 2-4 Jun 2014 | ||||
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