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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect
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UNSPECIFIED (2005) Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (8). pp. 673-676. doi:10.1088/0268-1242/20/8/004 ISSN 0268-1242.
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Official URL: http://dx.doi.org/10.1088/0268-1242/20/8/004
Abstract
Halo ion implantation was adopted to reduce the short channel effect (SCE) of a buried channel p-MOSFET device on pseudomorphic Si0.07Ge0.30 layers. The strained pseudomorphic Si0.70Ge0.30 layer of 10 nm thickness, with a Si cap layer on top, was grown using molecular beam epitaxy. The results show an overall reduction in threshold voltage (V-th) roll-off in both Si and pseudomorphic SiGe devices. Halo implantation of As+, 120 keV and dose 2 x 10(13) cm(-2), was successfully used to reduce roll-off for the 2 nm Si cap SiGe device by 0.3 V However, it was found that halo implantation causes the reverse short channel effect (RSCE) on the devices, which can result in V-th roll-up with reducing channel length. The effect of the RSCE becomes greater with increasing Si cap thicknesses of the SiGe devices. Also, non-halo implanted devices were found to demonstrate the RSCE. This is due to excess interstitials from the source/drain implant and their subsequent diffusion, which causes virtual halo dopant to form in non-halo implanted devices.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | August 2005 | ||||
| Dates: |
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| Volume: | 20 | ||||
| Number: | 8 | ||||
| Number of Pages: | 4 | ||||
| Page Range: | pp. 673-676 | ||||
| DOI: | 10.1088/0268-1242/20/8/004 | ||||
| Publication Status: | Published |
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