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Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

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Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, Tim (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 , Baltimore, MD, 2-4 Jun 2009. Published in: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 ISBN 9781557528698.

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Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3 mum at 200 K with 1.1% strain in the QW.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science > Engineering
Journal or Publication Title: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009
Publisher: IEEE
ISBN: 9781557528698
Official Date: 2009
Dates:
DateEvent
2009Published
Status: Not Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Conference Paper Type: Paper
Title of Event: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009
Type of Event: Conference
Location of Event: Baltimore, MD
Date(s) of Event: 2-4 Jun 2009
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