Nash, G. R., Przeslak, S. J. B., Smith, S. J., de Valicourt, G., Andreev, A. D., Carrington, P. J., Yin, M., Krier, A., Coomber, S. D., Buckle, L., Emeny, M. T. and Ashley, Tim (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 , Baltimore, MD, 2-4 Jun 2009. Published in: Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009 ISBN 9781557528698.

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3 mum at 200 K with 1.1% strain in the QW.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009
Publisher:	IEEE
ISBN:	9781557528698
Official Date:	2009
Dates:	Date Event 2009 Published
Status:	Not Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access
Conference Paper Type:	Paper
Title of Event:	Conference on Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009
Type of Event:	Conference
Location of Event:	Baltimore, MD
Date(s) of Event:	2-4 Jun 2009
Related URLs:	Organisation

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