Pooley, O. J., Gilbertson, A. M., Buckle, P. D., Hall, Ralph, Buckle, L., Emeny, M. T., Fearn, M., Cohen, L. F. and Ashley, Tim (2010) Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures. New Journal of Physics, Volume 12 (Number 5). Article number 053022. doi:10.1088/1367-2630/12/5/053022

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Abstract

Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QWs) with different doping densities are reported. The QW two-dimensional electron gas (2DEG) carrier densities and mobilities were extracted by analysis of the Hall and quantum Hall data, mobility spectra and Shubnikov-de Haas oscillations. 2DEG channel mobilities of up to 324 000 cm2 V-1 s−1 (T=2 K) and 44 000 cm2 V- 1 s−1 (T=300 K) are extracted. Carrier densities and mobilities for transport parallel to the 2DEG layer are also deduced where observable. The importance of thermally generated carriers in the lower AlInSb barrier material and the role of transport within the δ-doping plane is considered and the total carrier population as a function of temperature of the two samples is deduced, which is in excellent agreement with experimental observation.

Item Type:	Journal Article
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	New Journal of Physics
Publisher:	IOP Publishing
ISSN:	1367-2630
Official Date:	14 May 2010
Dates:	Date Event 14 May 2010 Published
Volume:	Volume 12
Number:	Number 5
Article Number:	Article number 053022
DOI:	10.1088/1367-2630/12/5/053022
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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