Gilbertson, A., Branford, W., Fearn, M., Buckle, L., Buckle, P., Ashley, Tim and Cohen, L. (2009) Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1−xAlxSb asymmetric quantum well heterostructures. Physical Review B (Condensed Matter and Materials Physics), Volume 79 (Number 23). Article number 235333. doi:10.1103/PhysRevB.79.235333

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Abstract

We present high-field magnetotransport data from a range of 30-nm-wide InSb/InAlSb quantum wells with room-temperature mobilities in excess of 6 m2 V−1 s−1. Samples with the narrowest Landau level broadening exhibit beating patterns in the magnetoresistance attributed to zero-field spin splitting. Rashba parameters are extracted from a range of samples and gate biases using the difference in spin populations inferred from fast Fourier transforms of the data. The influence of Landau level broadening and spin-dependent scattering rates are investigated by magnetoconductance simulations, which provide key signatures that we were able to verify by experimental observation. These results demonstrate that in addition to the large Zeeman splitting, the combination of large and spin-dependent broadening is the significant parameter in controlling the appearance of beating in these structures.

Item Type:	Journal Article
Divisions:	Faculty of Science > Engineering
Journal or Publication Title:	Physical Review B (Condensed Matter and Materials Physics)
Publisher:	American Physical Society
ISSN:	1098-0121
Official Date:	26 June 2009
Dates:	Date Event 26 June 2009 Published
Volume:	Volume 79
Number:	Number 23
Article Number:	Article number 235333
DOI:	10.1103/PhysRevB.79.235333
Status:	Peer Reviewed
Publication Status:	Published
Access rights to Published version:	Restricted or Subscription Access

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