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Electronic transport in modulation-doped InSb quantum well heterostructures

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Orr, J., Gilbertson, A., Fearn, M., Croad, O., Storey, C., Buckle, L., Emeny, M., Buckle, P. and Ashley, Tim (2008) Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B (Condensed Matter and Materials Physics), Volume 77 (Number 16). Article number 165334. doi:10.1103/PhysRevB.77.165334

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Official URL: http://dx.doi.org/10.1103/PhysRevB.77.165334

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Abstract

The mobility and carrier concentration of a number of InSb-based modulation-doped quantum well heterostructures are examined over a range of temperatures between 4.5 and 300 K. Wide well (30 nm) and narrow well (15 nm) structures are measured. The temperature dependent mobilities are considered within a scattering model that incorporates polar optical and acoustic phonon scatterings, interface roughness scattering, and scattering from charged impurities both in the three-dimensional background and within a distributed “quasi-two-dimensional” doping layer. Room temperature mobilities as high as 51 000 cm2/V s are reported for heterostructures with a carrier concentration of 5.8×1011 cm−2, while low-temperature mobility (below 40 K) reaches 248 000 cm2/V s for a carrier concentration of 3.9×1011 cm−2. A Schrödinger–Poisson model is used to calculate band structures in the material and is shown to accurately predict carrier concentrations over the whole temperature range. Low-temperature mobility is shown to be dominated by remote ionized impurity scattering in wide well samples and by a combination of ionized impurity and interface roughness scattering in narrow well samples.

Item Type: Journal Article
Divisions: Faculty of Science > Engineering
Journal or Publication Title: Physical Review B (Condensed Matter and Materials Physics)
Publisher: American Physical Society
ISSN: 1098-0121
Official Date: 28 April 2008
Dates:
DateEvent
28 April 2008Published
Volume: Volume 77
Number: Number 16
Article Number: Article number 165334
DOI: 10.1103/PhysRevB.77.165334
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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