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Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications
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Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi: 10.4028/www.scientific.net/MSF.821-823.624
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WRAP_2014 - ECSWRAP_CRM - Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications.pdf - Accepted Version - Requires a PDF viewer. Download (787Kb) | Preview |
Official URL: http://doi.org/10.4028/www.scientific.net/MSF.821-...
Abstract
Simulations are presented of a lateral PiN power diode on a Si/SiC substrate for harsh environment, high temperature applications. Thermal simulations compare the Si/SiC solution to SOI, Si/SiO2/SiC, bulk Si and SiC, showing that the Si/SiC architecture, with its thin Si film intimately formed on SiC, displays significant thermal advantages over any other Si solution, and is comparable to bulk SiC. Detailed electrical simulations show that in comparison to the same device in SOI, a Si/SiC PiN diode offers no deterioration of the on-state performance, improved self-heating effects at increased current and can potentially support higher breakdown voltages.
| Item Type: | Journal Article | ||||||
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| Subjects: | Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) |
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| Divisions: | Faculty of Science > Engineering Faculty of Science > Physics |
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| Library of Congress Subject Headings (LCSH): | Materials at high temperatures, Silicon-on-insulator technology | ||||||
| Journal or Publication Title: | Materials Research Forum | ||||||
| Publisher: | Trans Tech Publications | ||||||
| Official Date: | June 2015 | ||||||
| Dates: |
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| Date of first compliant deposit: | 28 July 2016 | ||||||
| Volume: | 821 | ||||||
| Number: | 7 | ||||||
| Number of Pages: | 4 | ||||||
| Page Range: | pp. 624-627 | ||||||
| DOI: | 10.4028/www.scientific.net/MSF.821-823.624 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Funder: | Royal Academy of Engineering (Great Britain) |
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