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Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications

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Chan, Chun Wa, Gammon, P. M., Shah, V. A., Chen, Han, Jennings, M. R., Fisher, Craig A., Pérez-Tomás, Amador, Myronov, Maksym and Mawby, P. A. (Philip A.) (2015) Simulations of a lateral PiN diode on SiSiC substrate for high temperature applications. Materials Research Forum, 821 (7). pp. 624-627. doi: 10.4028/www.scientific.net/MSF.821-823.624

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Official URL: http://doi.org/10.4028/www.scientific.net/MSF.821-...

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Abstract

Simulations are presented of a lateral PiN power diode on a Si/SiC substrate for harsh environment, high temperature applications. Thermal simulations compare the Si/SiC solution to SOI, Si/SiO2/SiC, bulk Si and SiC, showing that the Si/SiC architecture, with its thin Si film intimately formed on SiC, displays significant thermal advantages over any other Si solution, and is comparable to bulk SiC. Detailed electrical simulations show that in comparison to the same device in SOI, a Si/SiC PiN diode offers no deterioration of the on-state performance, improved self-heating effects at increased current and can potentially support higher breakdown voltages.

Item Type: Journal Article
Subjects: Q Science > QD Chemistry
T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Science > Engineering
Faculty of Science > Physics
Library of Congress Subject Headings (LCSH): Materials at high temperatures, Silicon-on-insulator technology
Journal or Publication Title: Materials Research Forum
Publisher: Trans Tech Publications
Official Date: June 2015
Dates:
DateEvent
June 2015Published
1 November 2014Accepted
Date of first compliant deposit: 28 July 2016
Volume: 821
Number: 7
Number of Pages: 4
Page Range: pp. 624-627
DOI: 10.4028/www.scientific.net/MSF.821-823.624
Status: Peer Reviewed
Publication Status: Published
Funder: Royal Academy of Engineering (Great Britain)

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