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Power semiconductor device
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University of Warwick (2016) Power semiconductor device. World International Property Organization no.WO201613208 [Online]. Available at: https://patentscope.wipo.int/search/en/detail.jsf?....
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Official URL: https://patentscope.wipo.int/search/en/detail.jsf?...
Abstract
A power semiconductor device is described. The device comprises a silicon carbide substrate and a layer of monocrystalline silicon having a thickness no more than 5um disposed directly on the substrate or directly on an interfacial layer having a thickness no more than 100 nm which is disposed directly on the substrate. The device comprises a lateral transistor, such as a laterally-diffused metal oxide semiconductor (LDMOS) transistor or lateral insulated gate bipolar transistor (LIGBT), comprising first and second contacts laterally-spaced contact regions disposed in the monocrystalline silicon layer.
Item Type: | Patent | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Power semiconductors., Silicon carbide. | ||||||
Publisher: | World International Property Organization | ||||||
Official Date: | 25 August 2016 | ||||||
Dates: |
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DOI: | WO201613208 | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Description: | The present invention relates to a power semiconductor device, in particular a silicon-on-silicon carbide semiconductor device. |
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