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Comparison of electron–phonon and hole–phonon energy loss rates in silicon
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Richardson-Bullock, J. S., Prest, M. J. (Martin J.), Shah, V. A., Gunnarsson, David, Prunnila, Mika, Dobbie, A. (Andrew), Myronov, Maksym, Morris, R. J. H. (Richard J. H.), Whall, Terry E., Parker, Evan H. C. and Leadley, D. R. (David R.) (2015) Comparison of electron–phonon and hole–phonon energy loss rates in silicon. Solid-State Electronics, Volume 103 . pp. 40-43. doi:10.1016/j.sse.2014.09.002
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Official URL: http://dx.doi.org/10.1016/j.sse.2014.09.002
Abstract
The hole-phonon energy loss rate in silicon is measured at phonon temperatures ranging from 300 mK to 700 mK. We demonstrate that it is approximately an order of magnitude higher than the corresponding electron–phonon energy loss rate over an identical temperature range.
| Item Type: | Journal Article | ||||||||||
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| Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
| Journal or Publication Title: | Solid-State Electronics | ||||||||||
| Publisher: | Elsevier | ||||||||||
| ISSN: | 0038-1101 | ||||||||||
| Official Date: | January 2015 | ||||||||||
| Dates: |
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| Volume: | Volume 103 | ||||||||||
| Page Range: | pp. 40-43 | ||||||||||
| DOI: | 10.1016/j.sse.2014.09.002 | ||||||||||
| Status: | Peer Reviewed | ||||||||||
| Publication Status: | Published | ||||||||||
| Access rights to Published version: | Restricted or Subscription Access |
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