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Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

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Huang, Chunming, Wu, Sanfeng, Sanchez, Ana M., Peters, Jonathan J. P., Beanland, R., Ross, Jason S., Rivera, Pasqual, Yao, Wang, Cobden, David H. and Xu, Xiaodong (2014) Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors. Nature Materials, Volume 13 (Number 12). pp. 1096-1101. doi:10.1038/nmat4064 ISSN 1476-1122.

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Official URL: http://dx.doi.org/10.1038/NMAT4064

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Abstract

PbZr1−xTixO3 (PZT) is one of the most important and widely used piezoelectric materials. The study of its local and average structures is of fundamental importance in understanding the origin of its high-performance piezoelectricity. Pair distribution function analysis and Rietveld refinement have been carried out to study both the short- and long-range order in the Zr-rich rhombohedral region of the PZT phase diagram. The nature of the monoclinic phase across the Zr-rich and morphotropic phase boundary area of PZT is clarified. Evidence is found that long-range average rhombohedral and both long- and short-range monoclinic regions coexist at all compositions. In addition, a boundary between a monoclinic (MA) structure and another monoclinic (MB) structure has been found. The general advantage of a particular monoclinic distortion (MA) for high piezoactivity is discussed from a spatial structural model of susceptibility to stress and electric field, which is applicable across the wide field of perovskite materials science.

Item Type: Journal Article
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: Nature Materials
Publisher: Nature Publishing Group
ISSN: 1476-1122
Official Date: 24 October 2014
Dates:
DateEvent
24 October 2014Published
10 September 2014Accepted
28 May 2014Submitted
Volume: Volume 13
Number: Number 12
Page Range: pp. 1096-1101
DOI: 10.1038/nmat4064
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access

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