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Valence-band density of states and surface electron accumulation in epitaxial SnO2 films
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Vasheghani Farahani, Sepehr, Veal, T. D. (Tim D.), Mudd, James J., Scanlon, David O., Watson, G. W., Bierwagen, O., White, M. E., Speck, James S. and McConville, C. F. (Chris F.) (2014) Valence-band density of states and surface electron accumulation in epitaxial SnO2 films. Physical Review B (Condensed Matter and Materials Physics), Volume 90 (Number 15). Article number 155413 . doi:10.1103/PhysRevB.90.155413
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Official URL: http://dx.doi.org/10.1103/PhysRevB.90.155413
Abstract
The surface band bending and electronic properties of SnO2(101) films grown on r-sapphire by plasma-assisted molecular beam epitaxy have been studied by Fourier-transform infrared spectroscopy (FTIR), x-ray photoemission spectroscopy (XPS), Hall effect, and electrochemical capacitance-voltage measurements. The XPS results were correlated with density functional theory calculation of the partial density of states in the valence-band and semicore levels. Good agreement was found between theory and experiment with a small offset of the Sn 4d levels. Homogeneous Sb-doped SnO2 films allowed for the calculation of the bulk Fermi level with respect to the conduction-band minimum within the k⋅p carrier statistics model. The band bending and carrier concentration as a function of depth were obtained from the capacitance-voltage characteristics and model space charge calculations of the Mott-Schottky plots at the surface of Sb-doped SnO2 films. It was quantitatively demonstrated that SnO2 films have downward band bending and surface electron accumulation. The surface band bending, unoccupied donor surface-state density, and width of the accumulation region all decrease with increasing Sb concentration.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > Physics | ||||||
| Library of Congress Subject Headings (LCSH): | Semiconductors | ||||||
| Journal or Publication Title: | Physical Review B (Condensed Matter and Materials Physics) | ||||||
| Publisher: | American Physical Society | ||||||
| ISSN: | 1098-0121 | ||||||
| Official Date: | 8 October 2014 | ||||||
| Dates: |
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| Date of first compliant deposit: | 29 December 2015 | ||||||
| Volume: | Volume 90 | ||||||
| Number: | Number 15 | ||||||
| Article Number: | Article number 155413 | ||||||
| DOI: | 10.1103/PhysRevB.90.155413 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Funder: | Materials Design Network, Engineering and Physical Sciences Research Council (EPSRC), Science Foundation Ireland (SFI), European Regional Development Fund (ERDF) | ||||||
| Grant number: | EP/G004447/2 (EPSRC), 06/IN.1/I92 (SFI), 06/IN.1/I92/EC07 (SFI), EP/K000144/1 (EPSRC), EP/K000136/1 (EPSRC), EP/L000202, (EPSRC) |
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