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Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions
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Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, Stephen and May, P. W. (2011) Scaling of hydrogen-terminated diamond FETs to sub-100-nm gate dimensions. IEEE Electron Device Letters, Volume 32 (Number 5). pp. 599-601. doi:10.1109/LED.2011.2114871 ISSN 0741-3106.
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Official URL: http://dx.doi.org/10.1109/LED.2011.2114871
Abstract
We present the dc operation of hydrogen-terminated diamond field-effect transistors (FETs) with gate lengths of 1 μm to 50 nm. The 50-nm device metrics include a maximum drain current of 290 mA/mm and a peak extrinsic transconductance of 95 mS/mm. As the device gate length is reduced, peak intrinsic transconductance is increased substantially to a value of 650 mS/mm for the 50-nm device. A minimum Ion/Ioff ratio of ~ 1.5 × 104 is maintained at this reduced gate dimension. These results appear highly promising for the improvement of hydrogen-terminated diamond FET high-frequency performance through reduction of the device gate length to sub-100-nm dimensions.
Item Type: | Journal Article | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | IEEE Electron Device Letters | ||||
Publisher: | IEEE | ||||
ISSN: | 0741-3106 | ||||
Official Date: | March 2011 | ||||
Dates: |
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Volume: | Volume 32 | ||||
Number: | Number 5 | ||||
Page Range: | pp. 599-601 | ||||
DOI: | 10.1109/LED.2011.2114871 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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