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Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process
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Fisher, Craig A., Jennings, M. R., Sharma, Yogesh K., Hamilton, Dean P., Gammon, P. M., Pérez-Tomás, Amador, Thomas, Stephen M., Burrows, S. E. (Susan E.) and Mawby, P. A. (Philip A.) (2014) Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process. IEEE Transactions on Semiconductor Manufacturing, Volume 27 (Number 3). pp. 443-451. doi:10.1109/TSM.2014.2336701 ISSN 0894-6507.
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Official URL: http://dx.doi.org/10.1109/TSM.2014.2336701
Abstract
In this paper, the application of a novel combined high temperature thermal oxidation and annealing process to mesa-isolated epitaxial-anode 4H-SiC PiN diodes with thick (110 μm) drift regions is presented, the aim of which was to increase the carrier lifetime in the 4H-SiC. Diodes were fabricated using 4H-SiC material having undergone this process, which consisted of a thermal oxidation in dry pure O2 at 1550°C followed by an argon anneal at the same temperature. Forward current-voltage characterization showed that the oxidised/annealed samples typically showed around 15% lower forward voltage drop and around 40% lower differential on-resistance (at 100 A/cm2 and 25°C) compared to control sample PiN diodes, whilst reverse recovery tests indicated a carrier lifetime increase also of around 40%. These findings illustrate that the use of this process is a highly effective and efficient way of improving the electrical characteristics of high voltage 4H-SiC bipolar devices.
Item Type: | Journal Article | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | IEEE Transactions on Semiconductor Manufacturing | ||||||
Publisher: | IEEE Computer Society | ||||||
ISSN: | 0894-6507 | ||||||
Official Date: | August 2014 | ||||||
Dates: |
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Volume: | Volume 27 | ||||||
Number: | Number 3 | ||||||
Page Range: | pp. 443-451 | ||||||
DOI: | 10.1109/TSM.2014.2336701 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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