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Bi flux-dependent MBE growth of GaSbBi alloys

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Rajpalke, Mohana K., Linhart, W. M., Yu, K. M., Jones, T. S. (Tim S.), Ashwin, M. J. and Veal, T. D. (Tim D.) (2015) Bi flux-dependent MBE growth of GaSbBi alloys. Journal of Crystal Growth, 425 . pp. 241-244. doi:10.1016/j.jcrysgro.2015.02.093

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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2015.02.093

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Abstract

The incorporation of Bi in GaSb1−xBix alloys grown by molecular beam epitaxy is investigated as a function of Bi flux at fixed growth temperature (275 °C) and growth rate View the MathML source. The Bi content is found to vary proportionally with Bi flux with Bi contents, as measured by Rutherford backscattering, in the range 0<x≤4.5%. The GaSbBi samples grown at the lowest Bi fluxes have smooth surfaces free of metallic droplets. The higher Bi flux samples have surface Bi droplets. The room temperature band gap of the GaSbBi epitaxial layers determined from optical absorption decreases linearly with increasing Bi content with a reduction of View the MathML source.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Q Science > QD Chemistry
Divisions: Faculty of Science > Chemistry
Library of Congress Subject Headings (LCSH): Molecular beam epitaxy, X-rays -- Diffraction , Antimonides, Bismuth compounds, Gallium compounds, Semiconductors
Journal or Publication Title: Journal of Crystal Growth
Publisher: Elsevier BV
ISSN: 0022-0248
Official Date: 1 September 2015
Dates:
DateEvent
1 September 2015Published
5 March 2015Available
Volume: 425
Page Range: pp. 241-244
DOI: 10.1016/j.jcrysgro.2015.02.093
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), United States. Department of Energy. Office of Basic Energy Sciences (OBES)
Grant number: EP/G004447/2, EP/H021388/1 (EPSRC), E-AC02-05CH11231 (OBES)

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