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Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications
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Allred, Phil, Myronov, Maksym, Rhead, S., Warburton, R., Intermite, G., Buller, G. and Leadley, D. R. (David R.) (2014) Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, Singapore, 02-04 Jun 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 pp. 67-68. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874639
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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874639
Abstract
SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 | ||||
Publisher: | IEEE | ||||
ISBN: | 9781479954278 | ||||
Book Title: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | ||||
Official Date: | 2014 | ||||
Dates: |
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Page Range: | pp. 67-68 | ||||
DOI: | 10.1109/ISTDM.2014.6874639 | ||||
Status: | Not Peer Reviewed | ||||
Publication Status: | Published | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 | ||||
Type of Event: | Conference | ||||
Location of Event: | Singapore | ||||
Date(s) of Event: | 02-04 Jun 2014 | ||||
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