Allred, Phil, Myronov, Maksym, Rhead, S., Warburton, R., Intermite, G., Buller, G. and Leadley, D. R. (David R.) (2014) Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, Singapore, 02-04 Jun 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 pp. 67-68. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874639

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Abstract

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

Item Type:	Conference Item (Paper)
Divisions:	Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title:	7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014
Publisher:	IEEE
ISBN:	9781479954278
Book Title:	2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Official Date:	2014
Dates:	Date Event 2014 Published
Page Range:	pp. 67-68
DOI:	10.1109/ISTDM.2014.6874639
Status:	Not Peer Reviewed
Publication Status:	Published
Conference Paper Type:	Paper
Title of Event:	7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014
Type of Event:	Conference
Location of Event:	Singapore
Date(s) of Event:	02-04 Jun 2014
Related URLs:	Organisation

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