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Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

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Allred, Phil, Myronov, Maksym, Rhead, S., Warburton, R., Intermite, G., Buller, G. and Leadley, D. R. (David R.) (2014) Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications. In: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014, Singapore, 02-04 Jun 2014. Published in: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 pp. 67-68. ISBN 9781479954278. doi:10.1109/ISTDM.2014.6874639

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Official URL: http://dx.doi.org/10.1109/ISTDM.2014.6874639

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Abstract

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

Item Type: Conference Item (Paper)
Divisions: Faculty of Science, Engineering and Medicine > Science > Physics
Journal or Publication Title: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014
Publisher: IEEE
ISBN: 9781479954278
Book Title: 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)
Official Date: 2014
Dates:
DateEvent
2014Published
Page Range: pp. 67-68
DOI: 10.1109/ISTDM.2014.6874639
Status: Not Peer Reviewed
Publication Status: Published
Conference Paper Type: Paper
Title of Event: 7th International Silicon-Germanium Technology and Device Meeting (ISTDM), 2014
Type of Event: Conference
Location of Event: Singapore
Date(s) of Event: 02-04 Jun 2014
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