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Ge/SiGe quantum confined stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm
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Dumas, D. C. S., Gallacher, K., Rhead, S., Myronov, Maksym, Leadley, D. R. (David R.) and Paul, D. J. (2014) Ge/SiGe quantum confined stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm. Optics Express, Volume 22 (Number 16). Article number 19284. doi:10.1364/OE.22.01914119284 ISSN 1094-4087.
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Official URL: http://dx.doi.org/10.1364/OE.22.01914119284
Abstract
Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB)
electro-absorption modulation covering 1460 to 1560 nm wavelength has
been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE)
diodes grown on a silicon substrate. The heterolayers for the devices
were designed using an 8-band k.p Poisson-Schrodinger solver which ¨
demonstrated excellent agreement with the experimental results. Modelling
and experimental results demonstrate that by changing the quantum well
width of the device, low power Ge/SiGe QCSE modulators can be designed
to cover the S- and C-telecommunications bands.
Item Type: | Journal Article | ||||||||
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Alternative Title: | |||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Optics Express | ||||||||
Publisher: | Optical Society of America | ||||||||
ISSN: | 1094-4087 | ||||||||
Official Date: | 1 August 2014 | ||||||||
Dates: |
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Volume: | Volume 22 | ||||||||
Number: | Number 16 | ||||||||
Article Number: | Article number 19284 | ||||||||
DOI: | 10.1364/OE.22.01914119284 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Restricted or Subscription Access |
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