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Investigation of the injection velocity of holes in strained Si pMOSFETs
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UNSPECIFIED (2005) Investigation of the injection velocity of holes in strained Si pMOSFETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (5). L20-L22. doi:10.1088/0268-1242/20/5/L02 ISSN 0268-1242.
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Official URL: http://dx.doi.org/10.1088/0268-1242/20/5/L02
Abstract
Using a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 mu m channel length.
| Item Type: | Journal Article | ||||
|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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| Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
| Publisher: | IOP PUBLISHING LTD | ||||
| ISSN: | 0268-1242 | ||||
| Official Date: | May 2005 | ||||
| Dates: |
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| Volume: | 20 | ||||
| Number: | 5 | ||||
| Number of Pages: | 3 | ||||
| Page Range: | L20-L22 | ||||
| DOI: | 10.1088/0268-1242/20/5/L02 | ||||
| Publication Status: | Published |
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