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Investigation of the injection velocity of holes in strained Si pMOSFETs

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UNSPECIFIED (2005) Investigation of the injection velocity of holes in strained Si pMOSFETs. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 20 (5). L20-L22. doi:10.1088/0268-1242/20/5/L02 ISSN 0268-1242.

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Official URL: http://dx.doi.org/10.1088/0268-1242/20/5/L02

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Abstract

Using a pulsed measurement system, the drain current in a high mobility strained Si pMOSFET was extracted in the absence of self-heating. This was used to demonstrate that the injection velocity of holes from the source is well below the thermal limit for biaxial tensile strained Si pMOSFETs down to 0.1 mu m channel length.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TA Engineering (General). Civil engineering (General)
Q Science > QC Physics
Journal or Publication Title: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Publisher: IOP PUBLISHING LTD
ISSN: 0268-1242
Official Date: May 2005
Dates:
DateEvent
May 2005UNSPECIFIED
Volume: 20
Number: 5
Number of Pages: 3
Page Range: L20-L22
DOI: 10.1088/0268-1242/20/5/L02
Publication Status: Published

Data sourced from Thomson Reuters' Web of Knowledge

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