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An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation

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Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792 ISSN 0885-8993.

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Official URL: http://dx.doi.org/10.1109/TPEL.2014.2338792

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Abstract

The tradeoff between the switching energy and electro-thermal robustness is explored for 1.2-kV SiC MOSFET, silicon power MOSFET, and 900-V CoolMOS body diodes at different temperatures. The maximum forward current for dynamic avalanche breakdown is decreased with increasing supply voltage and temperature for all technologies. The CoolMOS exhibited the largest latch-up current followed by the SiC MOSFET and silicon power MOSFET; however, when expressed as current density, the SiC MOSFET comes first followed by the CoolMOS and silicon power MOSFET. For the CoolMOS, the alternating p and n pillars of the superjunctions in the drift region suppress BJT latch-up during reverse recovery by minimizing lateral currents and providing low-resistance paths for carriers. Hence, the temperature dependence of the latch-up current for CoolMOS was the lowest. The switching energy of the CoolMOS body diode is the largest because of its superjunction architecture which means the drift region have higher doping, hence more reverse charge. In spite of having a higher thermal resistance, the SiC MOSFET has approximately the same latch-up current while exhibiting the lowest switching energy because of the least reverse charge. The silicon power MOSFET exhibits intermediate performance on switching energy with lowest dynamic latching current.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Diodes, Switching -- Silicon carbide -- heating, Metal oxide semiconductor field-effect transistors
Journal or Publication Title: IEEE Transactions on Power Electronics
Publisher: IEEE
ISSN: 0885-8993
Official Date: May 2015
Dates:
DateEvent
May 2015Published
11 July 2014Available
Volume: Volume 30
Number: Number 5
Number of Pages: 12
Page Range: pp. 2383-2394
DOI: 10.1109/TPEL.2014.2338792
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 13 June 2016
Date of first compliant Open Access: 13 June 2016
Funder: Science City Research Alliance, Engineering and Physical Sciences Research Council (EPSRC)
Grant number: EP/L007010/1, EP/K034804/1

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