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An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation
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Jahdi, Saeed, Alatise, Olayiwola M., Bonyadi, Roozbeh, Alexakis, Petros, Fisher, Craig A., Ortiz Gonzalez, Jose Angel, Ran, Li and Mawby, P. A. (Philip A.) (2015) An analysis of the switching performance and robustness of power MOSFETs body diodes : a technology evaluation. IEEE Transactions on Power Electronics, Volume 30 (Number 5). pp. 2383-2394. doi:10.1109/TPEL.2014.2338792
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Official URL: http://dx.doi.org/10.1109/TPEL.2014.2338792
Abstract
The tradeoff between the switching energy and electro-thermal robustness is explored for 1.2-kV SiC MOSFET, silicon power MOSFET, and 900-V CoolMOS body diodes at different temperatures. The maximum forward current for dynamic avalanche breakdown is decreased with increasing supply voltage and temperature for all technologies. The CoolMOS exhibited the largest latch-up current followed by the SiC MOSFET and silicon power MOSFET; however, when expressed as current density, the SiC MOSFET comes first followed by the CoolMOS and silicon power MOSFET. For the CoolMOS, the alternating p and n pillars of the superjunctions in the drift region suppress BJT latch-up during reverse recovery by minimizing lateral currents and providing low-resistance paths for carriers. Hence, the temperature dependence of the latch-up current for CoolMOS was the lowest. The switching energy of the CoolMOS body diode is the largest because of its superjunction architecture which means the drift region have higher doping, hence more reverse charge. In spite of having a higher thermal resistance, the SiC MOSFET has approximately the same latch-up current while exhibiting the lowest switching energy because of the least reverse charge. The silicon power MOSFET exhibits intermediate performance on switching energy with lowest dynamic latching current.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Diodes, Switching -- Silicon carbide -- heating, Metal oxide semiconductor field-effect transistors | ||||||
| Journal or Publication Title: | IEEE Transactions on Power Electronics | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 0885-8993 | ||||||
| Official Date: | May 2015 | ||||||
| Dates: |
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| Date of first compliant deposit: | 13 June 2016 | ||||||
| Volume: | Volume 30 | ||||||
| Number: | Number 5 | ||||||
| Number of Pages: | 12 | ||||||
| Page Range: | pp. 2383-2394 | ||||||
| DOI: | 10.1109/TPEL.2014.2338792 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Funder: | Science City Research Alliance, Engineering and Physical Sciences Research Council (EPSRC) | ||||||
| Grant number: | EP/L007010/1, EP/K034804/1 |
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