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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

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Jahdi, Saeed, Alatise, Olayiwola M., Alexakis, Petros, Ran, Li and Mawby, P. A. (Philip A.) (2015) The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs. IEEE Transactions on Industrial Electronics, Volume 62 (Number 1). pp. 163-171. doi:10.1109/TIE.2014.2326999 ISSN 0278-0046.

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Official URL: http://dx.doi.org/10.1109/TIE.2014.2326999

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Abstract

Silicon carbide Schottky barrier diodes (SiC-SBDs) are prone to electromagnetic oscillations in the output characteristics. The oscillation frequency, peak voltage overshoot, and damping are shown to depend on the ambient temperature and the metal-oxide- semiconductor field-effect transistor (MOSFET) switching rate (dIDS/dt). In this paper, it is shown experimentally and theoretically that dIDS/dt increases with temperature for a given gate resistance during MOSFET turn-on and reduces with increasing temperature during turn-off. As a result, the oscillation frequency and peak voltage overshoot of the SiC-SBD increases with temperature during diode turn-off. This temperature dependence of the diode ringing reduces at higher dIDS/dt and increases at lower dIDS/dt. It is also shown that the rate of change of dIDS/dt with temperature (d2IDS/dtdT) is strongly dependent on RG and using fundamental device physics equations, this behavior is predictable. The dependence of the switching energy on dIDS/dt and temperature in 1.2-kV SiC-SBDs is measured over a wide temperature range (-75 °C to 200 °C). The diode switching energy analysis shows that the losses at low dIDS/dt are dominated by the transient duration and losses at high dIDS/dt are dominated by electromagnetic oscillations. The model developed and results obtained are important for predicting electromagnetic interference, reliability, and losses in SiC MOSFET/SBDs.

Item Type: Journal Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Science, Engineering and Medicine > Engineering > Engineering
Library of Congress Subject Headings (LCSH): Diodes, Switching -- Silicon carbide -- heating, Metal oxide semiconductor field-effect transistors, Diodes, Schottky-barrier
Journal or Publication Title: IEEE Transactions on Industrial Electronics
Publisher: IEEE
ISSN: 0278-0046
Official Date: January 2015
Dates:
DateEvent
January 2015Published
29 May 2014Available
Volume: Volume 62
Number: Number 1
Number of Pages: 9
Page Range: pp. 163-171
DOI: 10.1109/TIE.2014.2326999
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Restricted or Subscription Access
Date of first compliant deposit: 20 June 2016
Date of first compliant Open Access: 20 June 2016
Funder: Engineering and Physical Sciences Research Council (EPSRC)

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