The Library
An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains
Tools
Tools
Tools
Jahdi, Saeed, Alatise, Olayiwola M., Fisher, Craig A., Ran, Li and Mawby, P. A. (Philip A.) (2014) An evaluation of silicon carbide unipolar technologies for electric vehicle drive-trains. IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume 2 (Number 3). pp. 517-528. doi:10.1109/JESTPE.2014.2307492
|
PDF
WRAP_69653.pdf - Accepted Version - Requires a PDF viewer. Download (3927Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/JESTPE.2014.2307492
Abstract
Voltage sourced converters (VSCs) in electric vehicle (EV) drive-trains are conventionally implemented by silicon Insulated Gate Bipolar Transistors (IGBTs) and p-i-n diodes. The emergence of SiC unipolar technologies opens up new avenues for power integration and energy conversion efficiency. This paper presents a comparative analysis between 1.2-kV SiC MOSFET/Schottky diodes and silicon IGBT/p-i-n diode technologies for EV drive-train performance. The switching performances of devices have been tested between -75 °C and 175 °C at different switching speeds modulated by a range of gate resistances. The temperature impact on the electromagnetic oscillations in SiC technologies and reverse recovery in silicon bipolar technologies is analyzed, showing improvements with increasing temperature in SiC unipolar devices whereas those of the silicon-bipolar technologies deteriorate. The measurements are used in an EV drive-train model as a three-level neutral point clamped VSC connected to an electric machine where the temperature performance, conversion efficiency and the total harmonic distortion is studied. At a given switching frequency, the SiC unipolar technologies outperform silicon bipolar technologies showing an average of 80% reduction in switching losses, 70% reduction in operating temperature and enhanced conversion efficiency. These performance enhancements can enable lighter cooling and more compact vehicle systems.
| Item Type: | Journal Article | ||||||
|---|---|---|---|---|---|---|---|
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TL Motor vehicles. Aeronautics. Astronautics |
||||||
| Divisions: | Faculty of Science > Engineering | ||||||
| Library of Congress Subject Headings (LCSH): | Electric vehicles, Power semiconductors, PWM power converters, Silicon carbide, Switching circuits | ||||||
| Journal or Publication Title: | IEEE Journal of Emerging and Selected Topics in Power Electronics | ||||||
| Publisher: | IEEE | ||||||
| ISSN: | 2168-6777 | ||||||
| Official Date: | September 2014 | ||||||
| Dates: |
|
||||||
| Volume: | Volume 2 | ||||||
| Number: | Number 3 | ||||||
| Number of Pages: | 12 | ||||||
| Page Range: | pp. 517-528 | ||||||
| DOI: | 10.1109/JESTPE.2014.2307492 | ||||||
| Status: | Peer Reviewed | ||||||
| Publication Status: | Published | ||||||
| Access rights to Published version: | Restricted or Subscription Access | ||||||
| Funder: | Science City Research Alliance |
Request changes or add full text files to a record
Repository staff actions (login required)
 |
View Item |
Downloads
Downloads per month over past year
