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Growth of dilute GaNSb by plasma-assisted MBE
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UNSPECIFIED (2005) Growth of dilute GaNSb by plasma-assisted MBE. In: 13th International Conference on Molecular Beam Epitaxy (MBE XII), Edinburgh, SCOTLAND, AUG 22-27, 2004. Published in: JOURNAL OF CRYSTAL GROWTH, 278 (1-4). pp. 188-192. doi:10.1016/j.jcrysgro.2004.12.148 ISSN 0022-0248.
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Official URL: http://dx.doi.org/10.1016/j.jcrysgro.2004.12.148
Abstract
Using plasma-assisted molecular beam epitaxy (MBE), GaNxSb1-x films have been grown onto GaSb and GaAs substrates over a range of growth temperatures (310-460° C). The films showed excellent crystalline quality and a nitrogen incorporation of 0-1.75% measured by X-ray diffraction. These materials should enable access to wavelengths in the 2-4 μ m range. © 2005 Elsevier B.V. All rights reserved.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | 1 May 2005 | ||||
Dates: |
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Volume: | 278 | ||||
Number: | 1-4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 188-192 | ||||
DOI: | 10.1016/j.jcrysgro.2004.12.148 | ||||
Publication Status: | Published | ||||
Title of Event: | 13th International Conference on Molecular Beam Epitaxy (MBE XII) | ||||
Location of Event: | Edinburgh, SCOTLAND | ||||
Date(s) of Event: | AUG 22-27, 2004 |
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