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Low speed crack propagation via kink formation and advance on the silicon (110) cleavage plane

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Kermode, James R., Gleizer, Anna, Kovel, Guy, Pastewka, Lars, Csanyi, Gabor, Sherman, Dov and De Vita, Alessandro (2015) Low speed crack propagation via kink formation and advance on the silicon (110) cleavage plane. Physical Review Letters, 115 (13). pp. 1-5. 135501. doi:10.1103/PhysRevLett.115.135501

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Official URL: http://dx.doi.org/10.1103/PhysRevLett.115.135501

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Abstract

We present density functional theory based atomistic calculations predicting that slow fracturing of silicon is possible at any chosen crack propagation speed under suitable temperature and load conditions. We also present experiments demonstrating fracture propagation on the Si(110) cleavage plane in the ~100 m/s speed range, consistent with our predictions. These results suggest that many other brittle crystals could be broken arbitrarily slowly in controlled experiments.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Engineering
Library of Congress Subject Headings (LCSH): Density functionals
Journal or Publication Title: Physical Review Letters
Publisher: American Physical Society
ISSN: 0031-9007
Official Date: 23 September 2015
Dates:
DateEvent
23 September 2015Published
18 June 2015Submitted
Volume: 115
Number: 13
Number of Pages: 5
Page Range: pp. 1-5
Article Number: 135501
DOI: 10.1103/PhysRevLett.115.135501
Status: Peer Reviewed
Publication Status: Published
Access rights to Published version: Open Access
Funder: Engineering and Physical Sciences Research Council (EPSRC), Imperial College, London. Rio Tinto Centre for Advanced Mineral Recovery, Deutsche Forschungsgemeinschaft (DFG), Seventh Framework Programme (European Commission) (FP7), United States. Department of Energy. Office of Science
Grant number: EP/L014742/1 (EPSRC), EP/L027682/1 (EPSRC), Pa 2023/2 (DFG), DE-AC02-06CH11357 (US.DoE.OoS)

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