UNSPECIFIED (2005) High-frequency transport in p-type Si/Si0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime. PHYSICAL REVIEW B, 71 (4). -. doi:10.1103/PhysRevB.71.045333

Research output not available from this repository, contact author.

Request Changes to record.

Abstract

The interaction of surface acoustic waves (SAWs) with p-type Si/Si0.87Ge0.13 heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7<T<1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV/V were found to oscillate with filling factor. Both the real sigma(1) and imaginary sigma(2) components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of sigma(1) to sigma(2), carrier localization can be followed as a function of temperature and magnetic field. At T=0.7 K, the variations of Gamma, DeltaV/V, and sigma(1) with SAW intensity have been studied and can be explained by heating of the two-dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.

Item Type:	Journal Article
Subjects:	Q Science > QC Physics
Journal or Publication Title:	PHYSICAL REVIEW B
Publisher:	AMERICAN PHYSICAL SOC
ISSN:	1098-0121
Official Date:	January 2005
Dates:	Date Event January 2005 UNSPECIFIED
Volume:	71
Number:	4
Number of Pages:	6
Page Range:	-
DOI:	10.1103/PhysRevB.71.045333
Publication Status:	Published

Data sourced from Thomson Reuters' Web of Knowledge

Request changes or add full text files to a record

Repository staff actions (login required)

View Item