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High-frequency transport in p-type Si/Si0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime

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UNSPECIFIED (2005) High-frequency transport in p-type Si/Si0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime. PHYSICAL REVIEW B, 71 (4). -. doi:10.1103/PhysRevB.71.045333 ISSN 1098-0121.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.71.045333

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Abstract

The interaction of surface acoustic waves (SAWs) with p-type Si/Si0.87Ge0.13 heterostructures has been studied for SAW frequencies of 30-300 MHz. For temperatures in the range 0.7<T<1.6 K and magnetic fields up to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV/V were found to oscillate with filling factor. Both the real sigma(1) and imaginary sigma(2) components of the high-frequency conductivity have been determined and compared with quasi-dc magnetoresistance measurements at temperatures down to 33 mK. By analyzing the ratio of sigma(1) to sigma(2), carrier localization can be followed as a function of temperature and magnetic field. At T=0.7 K, the variations of Gamma, DeltaV/V, and sigma(1) with SAW intensity have been studied and can be explained by heating of the two-dimensional hole gas by the SAW electric field. Energy relaxation is found to be dominated by acoustic phonon deformation potential scattering with weak screening.

Item Type: Journal Article
Subjects: Q Science > QC Physics
Journal or Publication Title: PHYSICAL REVIEW B
Publisher: AMERICAN PHYSICAL SOC
ISSN: 1098-0121
Official Date: January 2005
Dates:
DateEvent
January 2005UNSPECIFIED
Volume: 71
Number: 4
Number of Pages: 6
Page Range: -
DOI: 10.1103/PhysRevB.71.045333
Publication Status: Published

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